A group of scientists, directed by Prof Akinwande at MIT have fabricated the first high voltage field effect transistor using thin-film organic semiconductor technology. High driving voltages have been achieved by the group by offsetting the drain or source electrode from the gate creating an un-gated semiconductor region in series with a gated semiconductor region. This achievement represents the first demonstration of integrated high voltage thin film transistors based on an organic semiconductor technology that can be manufactured at low temperature (< 95 degrees Fahrenheit) completely lithographic manufacturing process that is compatible with both rigid and flexible substrates.
Target applications include an "MRI blanket" that covers the patient body rather than a tunnel that patient goes through - because the technology enables flexible devices, in addition to other high voltage applications for flexible electronics.
For more information see http://web.mit.edu/tlo/www/industry/power_electronics.html. MIT will present on this technology at Printed Electronics USA on Nov 20-21 www.PrintedElectronicsUSa.com 
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