Zinc oxide electronics is moving forward very rapidly. At Europe's largest conference on the subject Printed Electronics Europe last week, Cambridge University majored on the contribution that zinc oxide semiconductors make to transparent electronics, one of their slides being shown below. InGaZnO is of particular interest.
Their performance-cost profile is very attractive as shown below, with the slightly inferior cost against organics being far from certain.
For example, high temperature annealing demands more expensive substrates vs. organics but it may not be needed in future. Here performance relates to such things as charge carrier mobility which can limit high frequency performance and on off ratio which can be important for grey scales when using printed transistors as display drivers.
Source: Cambridge University
On the other hand, Changhee Lee of Seoul National University investigated ZnO:N film fabricated at around 100oC using ALD: f3dB > 150 MHz on flexible polymer substrates. The resulting thin film transistors and diodes have excellent performance including field-effect mobility of up to 22 cm2/Vs at 10V with an on/off current ratio of 108 and also with a subthreshold swing of 0.5 V.
The last year has seen many other uses for zinc oxide in the laboratory including as a replacement for the titanium dioxide scaffold in printed dye sensitised solar cells and as a piezoelectric in apparel and other locations. In these cases, zinc oxide nanowires have proved beneficial and GeorgiaTech has been where most of the advances took place.
For more see : Inorganic and Composite Printed Electronics 2009-2019
For more attend Printed Electronics & Photovoltaics USA 2010 .